2N7002 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DATA SHEET
SEMICONDUCTOR
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
• Pb−Free Package is Available.: Halogen Free
• AEC-Q101 Pass
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R_GS = 1.0 MΩ)
Drain Current
– Continuous T_C = 25°C (Note 1.)
– Continuous T_C = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
V_DSS
V_DGR
I_D
I_D
I_DM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
V_GS
V_GSM
±20
Vdc
±40
Vpk
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
R_θJA
P_D
R_θJA
T_J, T_stg
556
300
2.4
417
–ā55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
2N7002
Marking
702
' ^{M inimum Q t' y}
3000/TR
2N7002
H
Drain
3
702
W
1
2
Gate
Source
702 = Device Code
W
= Work Week
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R _DS(on) = 7.5 W
N - Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
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1
REV.02 20110725