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1SS422 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – High Speed SWITCHING Diodes
DATA SHEET
SEMICONDUCTOR
High Speed Switching Diodes
FEATURES
z Small surface mounting type
z High Speed
z High reliability with high surge current
E4
E4 :MARKING
1SS422
H
1
CATHODE
2
ANODE
SOD–523
Maximum Ratings and Electrical Characteristics, Single Diode @TA= 25℃
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
100
V
DC reverse voltage
VR
85
V
Peak forward current
IFM
500
mA
Mean rectifying current
IO
150
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-55~+125
℃
Electrical Ratings @TA= 25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF
1.2 V
IF=150mA
IR
0.1 µA
VR=85V
CT
3.0 pF
VR=0.5V, f=1MHZ
trr
4
ns VR=6V,IF=10mA,RL=100Ω
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1
REV.02 20120305