1SS400G Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – High Speed SWITCHING Diodes

DATA SHEET
SEMICONDUCTOR
Switching diode
1SS400G
H
• Applications
High speed switching
• Features
1) Extremely small surface mounting type.
2) High Speed.
3) High reliability.
• Construction
Silicon epitaxial planar
• Device Marking
1SS400G=7
• Pb-Free package is available
SOD - 723
1
CATHODE
2
ANODE
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V_RM
90
V
DC reverse voltage
VR
80
V
Peak forward current
I _FM
225
mA
Mean rectifying current
I_O
100
mA
Surge current (1s)
I surge
500
mA
Junction temperature
Tj
125
°C
Storage temperature
T_stg
– 55 ~ +125
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Min.
Forward voltage
VF
–
Reverse current
IR
–
Capacitance between terminals CT
–
Reverse recovery time
trr
–
Typ.
–
–
0.72
–
Max.
1.2
0.1
3.0
4
Unit
Conditions
V
I F=100mA
µA
VR=80V
pF
VR=0.5V , f=1MHz
n
sR=6V ,VIF=10mA , RL=100
ORDRING INFORMATION
Device
Marking
1SS400G
7
Shipping
3000/Tape&Reel
http://www.yeashin.com
1
REV.02 20120305