1N4448 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SIGNAL DIODE

SEMICONDUCTOR
DATA SHEET
1N4448
FEATURES
* Silicon epitaxial planar diodes
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High speed switching
* High current capability
* High reliability
MECHANICAL DATA
* Case: Glass sealed case
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.13 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum Average Rectified Current
Io
Maximum Power Dissipation Tamb=25^oC
Ptot
Maximum Forward Voltage
VF
Maximum Reverse Current
IR
Maximum Reverse Recovery Time
trr
Typical Junction Capacitance
CJ
Operating and Storage Temperature Range
TJ,TSTG
NOTE: 1-1N914A, 1N914B IS SAME AS 1N914, EXCEPT DIFFERENT IN FORWARD VOLTAGE:
1N914A-1.0/20 V/mA
1N914B-1.0/100 V/mA
2.Suffix "M" stands for "DO-34" package.(e.g.:1N4148M)
DO-35
25.0MIN
0.52Ø
L
2.0MAX
25.0MIN
DO-34
L: ^2.9
MAX
4.2
MAX
Dimensions in millimeters
1N4448
100
150
500
1.0/100
5000/75
4.0
4.0
-65 to + 200
UNITS
V
mA
mW
V/mA
nA/V
nS
pF
o_C
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REV.02 20120305