1N4148M Datasheet, PDF (1/2 Pages) Semtech Corporation – SILICON EPITAXIAL PLANAR DIODE

DATA SHEET
SEMICONDUCTOR
500 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
1N4148M
AXIAL LEAD
DO34
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
DEVICE MARKING DIAGRAM
(1N4148M)
Device Code : 1NxxxxM
Cathode
Anode
Fast Switching Device (TRR <4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV
Breakdown Voltage
IR
Reverse Leakage Current
IR=100µA
IR=5µA
VR=20V
VR=75V
Limits
Min Max
100
75
25
5
Unit
Volts
nA
µA
VF
Forward Voltage
TC1N4148M1,N4148M
IF=10mA
1.0
Volts
TRR
Reverse Recovery Time
C
Capacitance
IF=IR=10mA
RL=100Ω
IRR=1mA
VR=0V, f=1MHZ
4
nS
4
pF
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REV.02 20120305