1N4148 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes

DATA SHEET
SEMICONDUCTOR
SILICON EPITAXIAL PLANAR DIODE
FEATURES
Silicon Epitaxial Planar Diodes
fast switching diode.
This diode is also available in MiniMELF case with the type
designation LL4148.
High temperature soldering : 260^OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
1N4148
DO-35 Unit:inch(mm)
.079 (2.0)
MAXX
DIA.
1.02 (26.0)
MIN.
.165 (4.2)
MAX
.020 (.5)
TYP.
DIA.
Absolute Maximum Ratings (Ta=25 )
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
Reverse Voltage
Peak reverse voltage
Symbols
VR
VRM
Values
75
100
Rectified current (Average)
Half wave rectification with Resist. Load
at Tamb=25 and f 50Hz
IO
150 1)
Surge forward current at t<1s and Tj=25
Power dissipation at Tamb=25
Junction Temperature
IFSM
Ptot
Tj
500
500 1)
200
Storage temperature range
TS
-65 to +200
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Units
Volts
Volts
mA
mA
mW
1.02 (26.0)
MIN.
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1
REV.02 20120305