1N4001G Datasheet, PDF (1/2 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

DATA SHEET
SEMICONDUCTOR
1N4001G THRU 1N4007G
GLASS PASSIVATION RECTIFIERS
VOLTAGE - 50 to 1000 Volts CURRE NT - 1.0 Ampere
FE ATURES
• Low forward voltage drop
• High current capability
• High reliability
• High surge current capability
• Exceeds env ironmental standards of MIL-S-19500/22 8
• High temperature soldering : 260 ^OC / 10 seconds at terminals
• Pbfree product at available:99% Sn above meet RoHS
environment subst ance directive request
MECHAN ICAL D ATA
• Case:DO-41 Molded plastic
• Epoxy : UL 94V- O rate flame retardant.
• Lead Axial leads,solderable per MIL-STD-202,
Method 208 guaranteed
• polarity:Color band denotes cathode end
Mounting Po siti on: Any
DO-41 Unit:inch (mm)
.107 (2.7)
.080 (2.0)
DIA.
.034 (0.86)
.025 (0.65)
DIA.
1.0 (25.4)
MIN.
.205 (5.2)
.16 0 (4. 1)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CH ARACTERISTI CS
Ratings a t 25°C ambient temperature unless otherwise sp ecified.
Single phase , half wave, 60 Hz, r esistive or inductive load.
For capacitive load,derate current by 20%.
Item
Peak Reverse Voltage, Repetitive ; VRM
SY MBOLS 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
VRRM
50
100
200
400
600
800 1000
Maximum R MS Voltage
DC Reverse Voltage; VR
V_RMS
35
70
140
280
420
560
700
VDC
50
100
200
400
600
800 1000
Average Forw ard Current ,Io @ TA = 75°C 3/8” lead length,
I(AV)
1.0
60 HZ ^{resisti ve or inductive load.}
Peak Forward Surge Current,IFM(surge):8. 3ms single half _{I FSM}
30
sine-wave superimposedon rated load(JEDEC method)
Maximum Forward Voltage at 1.0A
VF
1.1
Maximum Full Load Reverse Curr ent ,Full Cycle Average
30.0
at TA=75°C
Maxi mum DC Reverse Current at T A=25°C
5.0
At Rated DC Blocking Volt age TA=100°C
IR
50
Typi cal Juncti on capacitance@ (Not e 1)
C_J
15
Typical Therma l Resistance (Note 2)
RθJA
50.0
Typical Therma l Resistance (Note 2)
Oper ati ng and Storage Temperature Range
NOTES:
RθJL
T_J,T_STG
25.0
-55 to +150
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375”(9.5mm)lead length P.C.B.mounted.
UNIT
V
V
V
A
A
V
µA
µA
µA
pF
°C/W
°C/W
°C
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REV.03 20150105