1N4001 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

DATA SHEET
SEMICONDUCTOR
1N4001 THRU 1N4007
PLASTIC SILICON RECTIFIERS
VOLTAGE - 50 to 1000 Volts CURRE NT - 1.0 Ampere
FEATURES
• Low forward voltage drop
• High current capability
• High reli ability
• High surge current capability
• Exceeds env ironmental standards of MIL-S-19500/228
• High temperature soldering : 260 ^O C / 10 seconds at terminals
• Pb free product at av ailable : 99% Sn above meet RoHS
env ironment subst ance directive request
.107 (2.7)
.080 (2.0)
DIA.
MECHANICAL DATA
• Ca se: DO-41 Molded plastic
• Epoxy : UL 94V- O rate flame retardant.
• Lead: Axial leads, solderable per M IL-STD-750,
Method 2026
• Polari ty: Color band denotes cathode end
Mounting Position: Any
.034 (0.86) _DIA.
.025 (0.65)
DO-41
Unit:inch (mm)
1.0 (25.4)
MIN.
.205 (5.2)
.160 (4.1)
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load,derate current by 20%.
Item
Maximun Repetitive peak reverse voltage
SYMBOLS 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
VRRM 50
100
200
400
600
800 1000
Maximum RMS Voltage
VRMS 35
70
140
280
420
560
700
Maximun DC blocking voltage
VDC
50
100
200
400
600
800 1000
Average Forward Current ,Io @ TA =75°C 3/8” lead length,
I(AV)
1.0
60 HZ resistive or inductive load.
Peak For ward Surge Current ,IFM (surge):8. 3ms single half
IFSM
30
si ne-wave superimposedon rated load(JEDEC method)
Maximum Forward Voltage at 1.0A DC and 25°C
VF
1.1
Maximum Full Load Rev erse Curr ent ,Full Cycle Average at
IR
30.0
TA=75°C
Maxi mum DC Reverse Cur rent at TA=25°C
5.0
IR
At Rated DC Blocking Volt age TA =100°C
50
Typi cal Junction capacitance@ (Not e 1)
CJ
15
Typical Thermal Resistance (Note 2)
RθJA
50.0
Typical Thermal Resistance (Note 2)
RθJL
25.0
Oper ati ng and Storage Tempe rature Range
NOTES:
TJ,TSTG
-50 to +150
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375”(9.5mm)lead length P.C.B.mounted.
UNIT
V
V
V
A
A
V
µA
µA
µA
pF
°C/W
°C/W
°C
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1
REV.03 20150105