|
ISC4356AS1 Datasheet, PDF (2/4 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |||
|
◁ |
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
1000
800
600
400
200
0
0
40
80 120 160 200
AMBIENT TEMPERATURE Ta(â)
ãSMALL-SIGNAL TRANSISTORã
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
Pc = 0.6W
ISAHAYA ELECTRONICS CORPORATION
|
▷ |