GR1A Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

GR1A THRU GR1M
■特性曲线（典型） Characteristics(Typical)
图1：正向电流降额曲线
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
图2：最大正向浪涌冲击耐受力
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
50
TL=90℃
40
8.3毫秒正弦半波
8.3ms Single Half Sine Wave
30
0.4
20
0.2
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
0
50
100
150
TL(℃)
10
01
10
周波数 ¹⁰⁰
Number of Cycles
图3: 典型正向特性曲线
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
图4：典型反向特性曲线
FIG.4：TYPICAL REVERSE CHARACTERISTICS
100
Tj=150℃
10
1.0
Tj=100℃
1.0
0.1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF(V)
0.01
0
20
40
图5: 反向恢复时间试验电路及测试波形示意图
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
Tj=25℃
60
80
100
Voltage(%)
t
IRR
IR
Document Number 0128
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
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