English
Language : 

UM3801 Datasheet, PDF (3/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch and P-Ch Fast Switching MOSFETs
◁
UM3801
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-6A
VGS=-4.5V , ID=-4A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
VGS=±20V , VDS=0V
VDS=-5V , ID=-6A
VDS=0V , VGS=0V , f=1MHz
VDS=-20V , VGS=-4.5V , ID=-6A
VDD=-24V , VGS=-10V , RG=3.3Ω,
ID=-1A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.021
26
45
-1.5
-4.2
---
---
---
12.6
15
9.8
2.2
3.4
16.4
20.2
55
10
930
148
115
Max.
---
---
32
56
-2.5
---
1
5
±100
---
30
---
---
---
---
---
---
---
---
---
---
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=-25V , L=0.1mH , IAS=-15A
Min.
28
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS
Continuous Source Current1,6
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
---
VG=VD=0V , Force Current
---
VGS=0V , IS=-1A , TJ=25℃
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
Max.
-5.7
-24
-1.2
Unit
A
A
V
3
 ▷