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| UM6016 Datasheet, PDF (2/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 60V Fast Switching MOSFETs | |||
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UM6016
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 â, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
â³BVDSS/â³TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
â³VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25â , ID=1mA
VGS=10V , ID=8A
VGS=4.5V , ID=6A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25â
VDS=48V , VGS=0V , TJ=55â
VGS=±20V , VDS=0V
VDS=5V , ID=8A
VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=4.5V , ID=8A
VDD=30V , VGS=10V , RG=3.3Ω,
ID=8A
VDS=15V , VGS=0V , f=1MHz
Min.
60
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1.2
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Typ.
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0.052
10
12
---
-5.76
---
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45
1.5
30
10.7
9.4
10.6
9
65.6
4.8
3240
210
146
Max.
---
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12
15
2.5
---
1
5
±100
---
3
42
15
13.2
21.2
16
131
9.6
4536
294
204
Unit
V
V/â
mΩ
V
mV/â
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=30A
Min. Typ. Max. Unit
77
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mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
IS
Continuous Source Current1,6
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
---
VG=VD=0V , Force Current
---
VGS=0V , IS=A , TJ=25â
---
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
---
IF=8A , dI/dt=100A/µs , TJ=25â ---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ⦠300us , duty cycle ⦠2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A
4.The power dissipation is limited by 150â junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
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18
15.6
Max.
8
32
1.2
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Unit
A
A
V
nS
nC
2
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