 English |
|
|
|
|
|
|
|
| UM4407 Datasheet, PDF (2/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – P-Ch 30V Fast Switching MOSFETs | |||
| |||
| ◁ |
UM4407
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25Ä, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
ϦBVDSSËϦTJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
ϦVGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ʳ Conditions
VGS=0V , ID=-250uA
Reference to 25Ä, ID=-1mA
VGS=-10V , ID=-10A
VGS=-4.5V , ID=-8A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25Ä
VDS=-24V , VGS=0V , TJ=55Ä
VGSËf20V , VDS=0V
VDS=-5V , ID=-10A
VDS=-15V , VGS=-4.5V , ID=-10A
VDD=-15V , VGS=-10V , RG=3.3:,
ID=-10A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.018
8
14
-1.6
5.04
---
---
---
25
30
10
10.4
9.4
10.2
117
24
3448
508
421
Max.
---
---
10.5
18.5
-2.5
---
-1
-5
f100
---
42
14
14.6
19
18
234
48
4827
711
589
Unit
V
V/Ä
m:
V
mV/Ä
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
ʳ Conditions
VDD=-25V , L=0.1mH , IAS=-30A
Min.
120
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
ʳ Conditions
Min.
IS
Continuous Source Current1,6
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
---
VG=VD=0V , Force Current
---
VGS=0V , IS=-1A , TJ=25Ä
---
trr
Reverse Recovery Time
IF=-10A , dI/dt=100A/µs ,
---
Qrr
Reverse Recovery Charge
TJ=25Ä
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width  300us , duty cycle  2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55.4A
4.The power dissipation is limited by 150Ä junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typ.
---
---
---
19.4
9.1
Max.
-10
-40
-1.2
---
---
Unit
A
A
V
nS
nC
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese