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UM4304 Datasheet, PDF (2/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 30V Fast Switching MOSFETs
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UM4304
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25ć, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
ϦBVDSS˂ϦTJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
ϦVGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ʳ Conditions
VGS=0V , ID=250uA
Reference to 25ć, ID=1mA
VGS=10V , ID=12A
VGS=4.5V , ID=10A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25ć
VDS=24V , VGS=0V , TJ=55ć
VGSːf20V , VDS=0V
VDS=5V , ID=12A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=10A
VDD=15V , VGS=10V , RG=3.3:
ID=10A
VDS=15V , VGS=0V , f=1MHz
Min.
30
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1.2
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Typ.
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0.028
4.7
7.5
1.5
-6.16
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47
1.7
21
7
6.9
9.6
8.6
59
15.6
2295
267
210
Max.
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6
9
2.5
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1
5
f100
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2.9
29.4
9.8
9.7
19.2
15
118
31.2
3213
374
294
Unit
V
V/ć
m:
V
mV/ć
uA
nA
S
:
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
ʳ Conditions
VDD=25V , L=0.1mH , IAS=24A
Min. Typ. Max. Unit
62.8 ---
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mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
ʳ Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25ć
IF=10A , dI/dt=100A/µs , TJ=25ć
Min.
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Typ.
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12
4.8
Max.
13
65
1.2
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width œ 300us , duty cycle œ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=46A
4.The power dissipation is limited by 150ć junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
V
nS
nC
2
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