UT4N60F Datasheet, PDF (1/5 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 600V Fast Switching MOSFETs

UT4N60F
N-Ch 600V Fast Switching MOSFETs
General Description
The UT4N60F is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UT4N60F meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
RDS(ON)
ID
600V
2.2 Ω
4A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO220F Pin Configuration
Absolute Maximum Ratings
DS
G
Symbol
VDSS
ID
IDM
VGSS
EAS
Dv/Dt
PD
TJ1TSTG
TL
Parameter
Drain-source Voltage
Drain current -Continuous (Tc=25℃)
-Continuous (Tc=100℃)
Drain current - pulsed
(Note1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note2)
Peak Diode Recovery Dv/Dt
(Note3)
Power Dissipation (Tc=25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum Lead temperature for soldering
purposes, 1/8" from case for seconds
TO220F
600
4
2.8
16
±30
8.8
4.5
33
0.26
-55-150
300
Unites
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Type Max Units
RθJC
Thermal Resistance, Junction-to-case
--
3.8 ℃/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
6.5 ℃/W
1