US3406 Datasheet, PDF (1/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 30V Fast Switching MOSFETs

US3406
N-Ch 30V Fast Switching MOSFETs
General Description
The US3406 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3406 meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
30V
RDS(ON)
105m ȍ
ID
3.6A
Applications
z Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
SOT23 Pin Configuration
D
G
D
S
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J, T_STG
Maximum
30
±20
3.6
2.9
15
1.4
0.9
-55 to 150
Units
V
V
A
W
°C
Thermal Data
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
90
125
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
80
Units
°C/W
°C/W
°C/W
1