US2402 Datasheet, PDF (1/5 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Channel Enhancement Mode MOSFET

US2402
Unitpoower
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V_(BR)DSS
R_DS(ON)
I_D
20V
50mÓ¨
3A
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current¹
T_C = 25 °C
T_C = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
T_C = 25 °C
T_C = 100 °C
Operating Junction & Storage Temperature Range
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_j, T_stg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
R_θJA
1_{Pulse width limited by maximum junction temperature.}
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±16
3
1
10
4.5
1
0.75
0.3
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
166
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (T_C = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current¹
Drain-Source On-State
Resistance¹
Forward Transconductance¹
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(ON)
R_DS(ON)
g_fs
STATIC
V_GS = 0V, I_D = 250µA
V_DS = V_GS, I_D = 250µA
V_DS = 0V, V_GS = ±16V
V_DS = 16V, V_GS = 0V
V_DS = 12V, V_GS = 0V, T_J = 125 °C
V_DS = 10V, V_GS = 4.5V
V_GS = 2.5V, I_D = 1.5A
V_GS = 4.5V, I_D = 3A
V_DS = 5V, I_D = 3A
LIMITS
UNIT
MIN TYP MAX
20
V
0.4 0.8 1.2
±100 nA
1
µA
10
10
A
55 85
mÓ¨
37 50
13
S
REV1.0
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