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US2305 Datasheet, PDF (1/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – P-Channel Enhancement Mode MOSFET | |||
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US2305
Unitpoower
P-Channel Enhancement Mode MOSFET
â¼ Simple Drive Requirement
â¼ Small Package Outline
â¼ Surface Mount Device
D
S
SOT-23 G
BVDSS
RDS(ON)
ID
-20V
65mΩ
- 4.2A
D
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
PD@TA=25â
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
- 20
± 12
-4.2
-3.4
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
90
Unit
â/W
Data and specifications subject to change without notice
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