US2302 Datasheet, PDF (1/6 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 20V Fast Switching MOSFETs

US2302
N-Ch 20V Fast Switching MOSFETs
General Description
The US2302 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US2302 meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
RDS(ON)
120m ȍ
ID
3.0A
Applications
z Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
SOT23 Pin Configuration
D
G
Absolute Maximum Ratings
Symbol
V_DSS
V_GSS
I_D*
I_DM*
I_S*
T_J
T_STG
P_D*
R_θJA*
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
V_GS=4.5V
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T_A=25°C
T_A=100°C
S
Rating
20
±12
3
10
1
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
1