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US2301 Datasheet, PDF (1/7 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – P -Channel E nhancement Mode F ield E ffect Trans is tor
S amHop Microelectronics C orp.
Green
Product
US 2301
J UL.30 2004 ver1.1
P-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
VDS S
-20V
ID
-3.4A
R DS (ON) ( m Ω ) Max
60 @ VGS = -4.5V
80 @ VGS = -2.5V
105 @ VGS = -1.8V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
-20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous a @ TJ=125 C
ID
-3.4
A
-P ulsed b
IDM
-12
A
Drain-S ource Diode Forward C urrent a
IS
-1.25
A
Maximum P ower Dissipation a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
marking
A01**
1