UN3002N3 Datasheet, PDF (1/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 30V Fast Switching MOSFETs

Unitpower
General Description
UN3002N3
N-Ch 30V Fast Switching MOSFETs
Product Summery
TThhee UUNN33000022NN33 iiss tthhee hhiigghheesstt ppeerrffoorrmmaannccee
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The UN3002N3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
BVDSS
RDSON
ID
30V
18mÓ¨
28A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X3 Pin Configuration
D
Absolute Maximum Ratings
S SSG
Symbol
V_DS
V_GS
I_D@T_C=25ć
I_D@T_C=100ć
I_D@T_A=25ć
I_D@T_A=70ć
I_DM
EAS
I_AS
P_D@T_C=25ć
P_D@T_A=25ć
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-SouUce Voltage
Continuous Drain Current, V_GS @ 10V¹
Continuous Drain Current, V_GS @ 10V¹
Continuous Drain Current, V_GS @ 10V¹
Continuous Drain Current, V_GS @ 10V¹
PulsedDrain Current²
Single Pulse Avalanche Energy³
Avalanche Current
Total Power Dissipation⁴
Total Power Dissipation⁴
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s
Steady State
30
f20ʳ
28
18
11.8
7.5
9.5
6
65
72
20
20.8
4.2
1.67
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
ć
ć
Thermal Data
Symbol
R_șJA
R_șJA
R_șJC
Parameter
Thermal Resistance Junction-ambient ¹
Thermal Resistance Junction-Ambient ¹ (t ”10s)
Thermal Resistance Junction-Case¹
1
ʳ Typ.
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Max.
75
30
6
Unit
ć/Wʳ
ć/Wʳ
ć/Wʳ
Rev A.02 D070711