UD50N03 Datasheet, PDF (1/4 Pages) ShenZhen XinDeYi Electronics Co., Ltd. – N-Ch 30V Fast Switching MOSFETs

Unitpower
UD50N03
N-Ch 30V Fast Switching MOSFETs
G^Ge^enⁿe^era^ral ^lD^De^es^sc^cri^rp^ipti^to^ionⁿ
The UD50N03 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD50N03 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
F^Fe^ea^atu^ture^res^s
 Advanced high cell density Trench technology
 Super Low Gate Charge
 Excellent CdV/dt effect decline
 100% EAS Guaranteed
 Green Device Available
Pro_Pd_rou_dc_ut _cS_tu_Sm_um_me_mry_ery
BVDSS
RDSON
ID
30V
12mΩ
51A
Ap_Ap_pli_pca_lit_ci_ao_tn_ios_ns
 High Frequency Point-of-Load Synchronous Buck
Converter for MB/NB/UMPC/VGA
 Networking DC-DC Power System
 Load Switch
TO_T2_O52₂₅P₂in_PiC_no_Cn_ofi_ng_fu_igra_ut_ri_ao_tn_ion
D
A_Ab_bs_so_olu_lute_teM_Ma_ax_xim_imu_um_mR_Ra_ati_tn_ing_gs_s
S
G
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
EAS
IAS
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V¹
Continuous Drain Current, VGS @ 10V¹
Continuous Drain Current, VGS @ 10V¹
Continuous Drain Current, VGS @ 10V¹
Pulsed Drain Current²
Single Pulse Avalanche Energy³
Avalanche Current
Total Power Dissipation⁴
Total Power Dissipation⁴
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
51
30
11
9
112
53
22
37.5
2.42
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Th^Te^hr^em^rmal^aD^l a^Dt^aa^ta
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient ¹
Thermal Resistance Junction-Case¹
　Typ.
---
---
Max.
62
4
Unit
℃/W
℃/W
1