X22C10 Datasheet, PDF (4/12 Pages) Xicor Inc. – Nonvolatile Static RAM

X22C10
MODE SELECTION
CE
WE
H
X
L
H
L
L
L
L
X
H
H
X
X
H
H
X
RECALL
H
H
H
H
L
L
H
H
STORE
H
H
H
H
H
H
L
L
ENDURANCE AND DATA RETENTION
I/O
Output High Z
Output Data
Input Data HIGH
Input Data LOW
Output High Z
Output High Z
Output High Z
Output High Z
Mode
Not Selected⁽³⁾
Read RAM
Write “1” RAM
Write “0” RAM
Array Recall
Array Recall
Nonvolatile Store⁽⁴⁾
Nonvolatile Store⁽⁴⁾
3815 PGM T05.1
Parameter
Min.
Units
Endurance
Store Cycles
Data Retention
100,000
1,000,000
100
Data Changes Per Bit
Store Cycles
Years
3815 PGM T06
POWER-UP TIMING
Symbol
t_PUR(5)
t_PUW(5)
Parameter
Power-up to Read Operation
Power-up to Write or Store Operation
Max.
100
5
Units
µs
ms
3815 PGM T07
EQUIVALENT A.C. LOAD CIRCUIT
A.C. CONDITIONS OF TEST
5V
OUTPUT
919Ω
Input Pulse Levels
Input Rise and
Fall Times
Input and Output
Timing Levels
0V to 3V
10ns
1.5V
3815 PGM T04.1
497Ω
100pF
3815 FHD F09.1
Notes: (3) Chip is deselected but may be automatically completing a store cycle.
(4) STORE = LOW is required only to initiate the store cycle, after which the store cycle will be automatically completed
(e.g. STORE = X).
(5) t_PUR and t_PUW are the delays required from the time V_CC is stable until the specified operation can be initiated. These
parameters are periodically sampled and not 100% tested.
4