X28HC256 Datasheet, PDF (14/24 Pages) Xicor Inc. – 5 Volt, Byte Alterable E2PROM

X28HC256
CE Controlled Write Cycle
ADDRESS
CE
OE
WE
tAS
tOES
tCS
tWC
tAH
tCW
tOEH
tCH
DATA IN
DATA OUT
Page Write Cycle
DATA VALID
tDS
tDH
HIGH Z
3859 FHD F07
OE⁽⁹⁾
CE
WE
ADDRESS⁽¹⁰⁾
tWP
tBLC
tWPH
I/O
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
*For each successive write within the page write operation, A7–A14 should be the same or
writes to an unknown address could occur.
LAST BYTE
BYTE n+2
tWC
3859 FHD F08
Notes: (9) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and
WE HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW
effectively performing a polling operation.
(10) The timings shown above are unique to page write operations. Individual byte load operations within the page write must
conform to either the CE or WE controlled write cycle timing.
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