X28HT512 Datasheet, PDF (1/13 Pages) Xicor Inc. – High Temperature, 5 Volt, Byte Alterable E2PROM

X28HT512
512K
X28HT512
64K x 8 Bit
High Temperature, 5 Volt, Byte Alterable E²PROM
FEATURES
• 175°C Full Functionality
• Simple Byte and Page Write
—Single 5V Supply
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
• Highly Reliable Direct Write™ Cell
—Endurance: 10,000 Write Cycles
—Data Retention: 100 Years
—Higher Temperature Functionality is Possible
by Operating in the Byte Mode
DESCRIPTION
The X28HT512 is an 64K x 8 CMOS E²PROM, fabri-
cated with Xicor’s proprietary, high performance, float-
ing gate CMOS technology which provides Xicor prod-
ucts superior high temperature performance character-
istics. Like all Xicor programmable nonvolatile memo-
ries the X28HT512 is a 5V only device. The X28HT512
features the JEDEC approved pinout for bytewide memo-
ries, compatible with industry standard EPROMS.
The X28HT512 supports a 128-byte page write opera-
tion, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds.
PIN CONFIGURATION
VBB
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
FLAT PACK
CERDIP
SOIC (R)
1
32
2
31
3
30
4
29
5
28
6
27
7
26
8
25
X28HT512
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
6614 FHD F02.1
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
6614-1.5 8/5/97 T2/C0/D0 EW
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15
17
19
21
22
A1
A0
I/O1 VSS I/O4 I/O7 ^CE
13
14
16
18
20
23
24
A2
A3
12
11
A10 ^OE
25
26
A4
A5
10
9
X28HT512
A11 A9
27
28
(BOTTOM VIEW)
A6
A7
8
7
A8
A13
29
30
A12 A15 ^NC VCC NC ^NC A14
6
5
2
36
34
32
31
NC ^{VBB NC} WE ^NC
4
3
1
35
33
6614 FHD F23
1
Characteristics subject to change without notice