X22C12 Datasheet, PDF (1/12 Pages) Xicor Inc. – Nonvolatile Static RAM

X22C12
1K Bit
X22C12
Nonvolatile Static RAM
256 x 4
FEATURES
• High Performance CMOS
—150ns RAM Access Time
• High Reliability
—Store Cycles: 1,000,000
—Data Retention: 100 Years
• Low Power Consumption
—Active: 40mA Max.
—Standby: 100µA Max.
• Infinite Array Recall, RAM Read and Write Cycles
• Nonvolatile Store Inhibit: VCC = 3.5V Typical
• Fully TTL and CMOS Compatible
• JEDEC Standard 18-Pin 300-mil DIP
• 100% Compatible with X2212
—With Timing Enhancements
DESCRIPTION
The X22C12 is a 256 x 4 CMOS NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile E²PROM. The NOVRAM design allows data to
be easily transferred from RAM to E²PROM (STORE)
and from E²PROM to RAM (RECALL). The STORE
operation is completed within 5ms or less and the
RECALL is completed within 1µs.
Xicor NOVRAMs are designed for unlimited write opera-
tions to the RAM, either RECALLs from E²PROM or
writes from the host. The X22C12 will reliably endure
1,000,000 STORE cycles. Inherent data retention is
greater than 100 years.
FUNCTIONAL DIAGRAM
PIN CONFIGURATION
A0
A1
A2
A3
A4
STORE
RECALL
I/O1
I/O2
I/O3
I/O4
CS
WE
NONVOLATILE E2PROM
MEMORY ARRAY
ROW
SELECT
STATIC RAM
MEMORY ARRAY
CONTROL
LOGIC
INPUT
DATA
CONTROL
COLUMN
I/O CIRCUITS
COLUMN SELECT
A7 A6 A5
STORE
ARRAY
RECALL
VCC
VSS
3817 FHD F01
A7
A4
A3
A2
A1
A0
CS
VSS
STORE
PLASTIC DIP
CERDIP
1
18
2
17
3
16
4
15
5 X22C12 14
6
13
7
12
8
11
9
10
VCC
A6
A5
I/O4
I/O3
I/O2
I/01
WE
RECALL
3817 FHD F02
A7
A4
A3
A2
A1
A0
CS
VSS
STORE
RECALL
SOIC
1
20
2
19
3
18
4
17
X22C12
5
16
6
15
7
14
8
13
9
12
10
11
VCC
A6
A5
I/O4
NC
NC
I/O3
I/O2
I/O1
WE
3815 FHD F10.1
© Xicor, Inc. 1991, 1995 Patents Pending
3817-2.4 7/30/96 T0/C0/D1 SH
1
Characteristics subject to change without notice