2CL3030 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 3.0A 30kV --HIGH VOLTAGE SILICON STACK

2CL3030
3.0A 30kV --HIGH VOLTAGE SILICON STACK
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings : (Unit:mm)
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
2CL3030
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
HVC-212720 Series
Screw Holes M5
Voltage doubler circuit
Microwave emission power
20.0
General purpose high voltage rectifier,
Voltage multiplier assembly.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
XXXXXXXX
218.0
(max)
HVGT
Items
Symbols
Condition
2CL3030
Repetitive Peak Renerse Voltage
V RRM
Ta=25°C, IR =1.0uA
30
Average Output Current
IO
Ta=25°C,Resistive Load
3.0
M5
27.0
(max)
Units
kV
A peak
Suege Current
I FSM
Ta=25°C,8.3 ms
60
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
125
°C
-40 to +125
°C
2CL3030
36
Units
V
Maximum Reverse Current
Maximum Reverse Recovery Time
IR1
at 25°C,VR =VRRM
IR2
at 100°C,V R =VRRM
Trr
at 25°C;
10
uA
100
uA
--
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
--
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: [e-mail]
China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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