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MMBD914 Datasheet, PDF (2/4 Pages) Zowie Technology Corporation – HIGH-SPEED SWITCHING DIODE
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Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
Min
V(BR)R
75
VF
—
IR
—
Cj
—
trr
—
Max
—
1.0
25
5.0
4.0
4.0
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
1
500
400
See Note 1
0.1
300
200
0.01
100
Unit
V
V
nA
µA
pF
nS
Test Condition
@ IR = 100µA
@ IF = 10mA
@ VR = 20V
@ VR = 75V
VR = 0V, f = 1.0MHz
IF = IR = 10mA,
IRR = 0.1 x IR, RL = 100
TA = 150ºC
TA = 75ºC
TA = 25ºC
TA = 0ºC
TA = -40ºC
0
0
100
200
TA, AMBIENT TEMPERATURE, (°C)
Fig. 1 Power Derating Curve
10000
1000
TA = 150ºC
TA = 125ºC
100
TA = 75ºC
10
TA = 25ºC
TA = 0ºC
1
TA = -40ºC
0.1
0
20
40
60
80
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
0.001
0
0.5
1.0
1.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
2.0
1.8
f = 1.0MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
MMBD914
2 of 4
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