BAS70W Datasheet, PDF(2/5 Page) NXP Semiconductors

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BAS70W Datasheet, PDF (2/5 Pages) NXP Semiconductors – Schottky barrier double diodes

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Maximum Ratings and Electrical Characteristics, Single Diode @TA=25Â°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

Symbol Min

V(BR)R

trr

Typ

Max

Unit

Test Condition

V @ IR = 10ÂµA

410

@ IF = 1.0mA, tp < 300Âµs

750

mV @ IF = 10mA, tp < 300Âµs

1000

@ IF = 15mA, tp < 300Âµs

100

nA @ VR = 50V, tp < 300Âµs

1.5

2.0

pF VR = 0V, f = 1.0MHz

5.0

IF = 10mA through IR = 10mA

to IR = 1.0mA, RL = 100

BAS70W / AW / CW / SW

2 of 5

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