UF4001_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.0A ULTRAFAST DIODE

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
UF4001 – UF4007 ^Pb
1.0A ULTRAFAST DIODE
A
B
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
UF
4001
50
UF
4002
100
UF
4003
200
UF
4004
400
UF
4005
600
UF
4006
800
UF
4007
1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
30
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
1.0
1.3
1.7
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
5.0
100
µA
Reverse Recovery Time (Note 2)
trr
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
20
10
pF
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
UF4001 – UF4007
1 of 4
© 2006 Won-Top Electronics