SD1030-06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 10A SCHOTTKY BARRIER DIODE

WTE
POWER SEMICONDUCTORS
SD1030 – SD1045 ^Pb
10A SCHOTTKY BARRIER DIODE
Features
!" Schottky Barrier Chip
!" Guard Ring Die Construction for
Transient Protection
!" High Current Capability
!" Low Power Loss, High Efficiency
!" High Surge Current Capability
!" For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Mechanical Data
!" Case: DO-201AD, Molded Plastic
!" Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!" Polarity: Cathode Band
!" Weight: 1.2 grams (approx.)
!" Mounting Position: Any
!" Marking: Type Number
!" Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
A
B
A
C
D
DO-201AD
Dim
Min
Max
A
25.4
—
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TL = 100°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 10ms
Single sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@IF = 10A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RθJL
Tj, TSTG
SD1030
30
21
SD1035
SD1040
35
40
25
28
10
340
0.55
0.8
70
900
8.0
-65 to +150
SD1045
Unit
45
V
32
V
A
A
V
mA
pF
°C/W
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SD1030 – SD1045
1 of 4
© 2006 Won-Top Electronics