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SB8150D Datasheet, PDF (1/4 Pages) Won-Top Electronics – 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
WTE
POWER SEMICONDUCTORS
SB8150D Pb
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
C
! Guard Ring Die Construction for
A
J
Transient Protection
! Low Forward Voltage Drop
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
B
D
PIN 1
E
3
Inverters, Free Wheeling, and Polarity
G
Protection Applications
H
K
Mechanical Data
! Case: D2PAK/TO-263, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 1.7 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 +
PIN 3 -
PP
+
Case
D2 PAK/TO-263
Dim
Min
Max
A
9.80
10.40
B
9.60
10.60
C
4.40
4.80
D
8.50
9.10
E
2.80
—
G
1.00
1.40
H
—
0.90
J
1.20
1.40
K
0.30
0.70
P
2.35
2.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TC = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
@IF = 8.0A
@TA = 25°C
@TA = 100°C
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RJC
Tj, TSTG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB8150D
150
105
8.0
150
0.92
0.5
50
400
3.0
-65 to +150
Unit
V
V
A
A
V
mA
pF
°C/W
°C
SB8150D
1 of 4
© 2006 Won-Top Electronics