SB8150CT Datasheet, PDF (1/4 Pages) Won-Top Electronics – 8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER

WTE
POWER SEMICONDUCTORS
SB8150CT ^Pb
8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
B
! Guard Ring for Transient Protection
! Low Forward Voltage Drop
C
! Low Reverse Leakage Current
! High Surge Current Capability
G
A
! Plastic Material has UL Flammability
Classification 94V-O
PIN1 2 3













































D
Mechanical Data
! Case: TO-220, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 2.24 grams (approx.)
! Mounting Position: Any
! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
E
P
I
H
L
J
K
TO-220
Dim
Min
Max
A
13.90
15.90
B
9.80
10.70
C
2.54
3.43
D
3.56
4.56
E
12.70
14.73
F
0.51
0.96
G
3.55 Ø 4.09 Ø
H
5.75
6.85
I
4.16
5.00
J
2.03
2.92
K
0.30
0.65
L
1.14
1.40
P
2.29
2.79
All Dimensions in mm
PIN 1 -
PIN 3 -
+
Case, PIN 2
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T_C = 95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
@I_F = 4.0A
@T_A = 25°C
@T_A = 100°C
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
Tj, TSTG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB8150CT
Unit
150
V
105
V
8.0
A
150
A
0.92
V
0.5
50
mA
700
pF
-65 to +150
°C
SB8150CT
1 of 4
© 2006 Won-Top Electronics