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SB2520FCT_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 25A DUAL SCHOTTKY BARRIER RECTIFIER
WTE
POWER SEMICONDUCTORS
SB2520FCT – SB25100FCT Pb
25A DUAL SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
B
! Guard Ring for Transient Protection
! Low Forward Voltage Drop
C
! Low Reverse Leakage Current
! High Surge Current Capability
G
A
! Plastic Material has UL Flammability
Classification 94V-O
PIN1 2 3
D
Mechanical Data
! Case: ITO-220, Full Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 2.24 grams (approx.)
! Mounting Position: Any
! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
E
P
I
H
L
J
K
ITO-220
Dim
Min
Max
A
14.60
15.40
B
9.70
10.30
C
2.55
2.85
D
3.56
4.16
E
13.00
13.80
F
0.30
0.90
G
3.00 Ø 3.50 Ø
H
6.30
6.90
I
4.20
4.80
J
2.50
2.90
K
0.36
0.80
L
2.90
3.30
P
2.29
2.79
All Dimensions in mm
PIN 1 -
PIN 3 -
+
PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
SB
SB
SB
SB
SB
SB
SB
SB
2520FCT 2530FCT 2540FCT 2545FCT 2550FCT 2560FCT 2580FCT 25100FCT
Unit
VRRM
VRWM
20
30
40
45
50
60
80 100
V
VR
VR(RMS)
14
21
28
32
35
42
56
70
V
Average Rectified Output Current @TC = 95°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
IFSM
on rated load (JEDEC Method)
Forward Voltage
@IF = 12.5A
VFM
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
Typical Junction Capacitance (Note 1)
Cj
Operating and Storage Temperature Range
Tj, TSTG
25
200
0.55
0.75
0.5
100
1100
-65 to +150
A
A
0.85
V
mA
pF
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB2520FCT – SB25100FCT
1 of 4
© 2006 Won-Top Electronics