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SB120_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.0A SCHOTTKY BARRIER DIODE
WTE
POWER SEMICONDUCTORS
SB120 – SB1100 Pb
1.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
A
B
A
Inverters, Free Wheeling, and Polarity
Protection Applications
C
D
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TL = 100°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@IF = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Symbol SB120 SB130 SB140 SB150 SB160 SB180 SB1100 Unit
VRRM
VRWM
20
30
40
50
60
80
100
V
VR
VR(RMS)
14
21
28
35
42
56
70
V
IO
1.0
A
IFSM
VFM
IRM
Cj
RJL
RJA
Tj, TSTG
40
A
0.50
0.70
0.85
V
0.5
10
mA
110
80
pF
15
50
°C/W
-65 to +150
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB120 – SB1100
1 of 4
© 2006 Won-Top Electronics
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