P600A Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 6.0 Amperes)

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POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 2.1 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Epoxy: UL 94V-O rate flame retardant
P600A – P600M
6.0A SILICON RECTIFIER
A
B
A
C
D
P-600
Dim
Min
Max
A
25.4
—
B
8.60
9.10
C
1.20
1.30
D
8.60
9.10
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol P600A P600B P600D P600G P600J P600K P600M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
(Note 1)
@T_A = 60°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 6.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
100 200 400 600 800 1000
V
70
140 280 420 560 700
V
6.0
A
400
A
1.0
V
5.0
µA
1.0
mA
150
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
20
K/W
Operating Temperature Range
Tj
-50 to +150
°C
Storage Temperature Range
TSTG
-50 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
P600A – P600M
1 of 3
© 2002 Won-Top Electronics