KBJ10A Datasheet, PDF (1/3 Pages) Won-Top Electronics – 10A BRIDGE RECTIFIER

WTE
POWER SEMICONDUCTORS
KBJ10A – KBJ10M
10A BRIDGE RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
G
! High Reliability
! High Surge Current Capability
! Ideal for Printed Circuit Boards
C
H
















































J
K
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: As Marked on Body
! Weight: 4.0 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
+~~-
L
D
E
PPP
M
N
R
G
S
T
KBJ-4
Dim Min
Max
A
24.7
25.3
B
14.7
15.3
C
—
4.0
D
17.0
18.0
E
3.3
3.7
G
3.1Ø
3.4Ø
H
1.05
1.45
J
1.7
2.1
K
0.9
1.1
L
1.5
1.9
M
4.8
5.16
N
3.8
4.4
P
7.3
7.7
R
9.3
9.7
S
3.4
3.9
T
0.6
0.8
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current @T_C = 100°C
@T_A = 25°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on IFSM
rated load (JEDEC Method)
I²t Rating for Fusing (t < 8.35ms)
I²t
Forward Voltage (per diode)
@I_F = 5.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_C = 100°C
Typical Thermal Resistance (Note 1)
VFM
IR
R
JC
Operating and Storage Temperature Range
Tj, TSTG
100
200
400
600
800
1000 V
70
140
280
420
560
700
V
10
3.0
A
170
A
120
1.05
5.0
500
2.5
-55 to +150
A²s
V
µA
°C/W
°C
Note: 1. Thermal resistance junction to case, mounted on 150 x 150 x 1.6mm thick Cu plate heatsink.
KBJ10A – KBJ10M
1 of 3
© 2002 Won-Top Electronics