HER101G Datasheet, PDF (1/4 Pages) Jinan Gude Electronic Device – 1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

WTE
POWER SEMICONDUCTORS
HER101G – HER108G ^Pb
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
A
B
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
HER
101G
50
HER
102G
100
HER
103G
200
HER
104G
300
HER
105G
400
HER
106G
600
HER
107G
800
HER
108G
1000
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70 140 210 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
30
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
1.0
1.3
1.7
V
5.0
100
µA
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
20
15
pF
Operating Temperature Range
Tj
-65 to +150
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER101G – HER108G
1 of 4
© 2006 Won-Top Electronics