G35160 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE

®
WON-TOP ELECTRONICS
Features
 Glass Passivated Die Construction
 Low Leakage
 Low Forward Voltage
 High Surge Current Capability
 Die Size 160mil SQ
G35160
35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE
Pb
Anode +
C
D
Mechanical Data
B
 Case: Cell Diode Passivated with Silicon Rubber
 Terminal: Copper Disc with Ag Plated
 Polarity: Indicated by Large Disc On Cathode Side
 Mounting Position: Any
 Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
A
C35M
Dim
Min
Max
A
—
6.40
B
—
5.46
C
0.75
—
D
—
2.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T_C = 125°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
@I_F = 35A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
RǀJA
TJ, TSTG
Value
1600
1120
35
400
1.2
5.0
1.4
-40 to +150
Unit
V
V
A
A
V
µA
°C/W
°C
© Won-Top Electronics Co., Ltd.
Revision: April, 2012
www.wontop.com
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