FR101G Datasheet, PDF (1/4 Pages) Rectron Semiconductor – FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)

WTE
POWER SEMICONDUCTORS
FR101G – FR107G ^Pb
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
A
B
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T_A = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol FR101G FR102G FR103G FR104G FR105G FR106G FR107G Unit
VRRM
VRWM
VR
50
100 200 400 600 800 1000 V
VR(RMS)
35
70
140 280 420 560 700
V
IO
1.0
A
IFSM
VFM
IRM
trr
Cj
Tj
TSTG
30
A
1.3
V
5.0
100
µA
150
250
500
nS
15
pF
-65 to +150
°C
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
FR101G – FR107G
1 of 4
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