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DF150S_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
WTE
POWER SEMICONDUCTORS
DF150S – DF1510S Pb
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
-
B
~
L
Mechanical Data
J
Case: DF-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 1.0 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
+
~
H
K
G
A
C
DE
DF-S
Dim
Min
Max
A
7.50
8.50
B
6.20
6.80
C
0.25
—
D
0.10
0.28
E
9.40
10.30
G
1.02
1.53
H
8.00
8.51
J
2.20
2.60
K
5.00
5.20
L
0.89
1.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TA = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per element
@IF = 1.5A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance per leg (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
DF
150S
50
35
DF
151S
100
70
DF
152S
200
140
DF
154S
400
280
DF
156S
600
420
DF DF
158S 1510S
800 1000
560 700
Unit
V
V
IO
1.5
A
IFSM
50
A
VFM
IRM
Cj
RθJA
RθJL
Tj, TSTG
1.1
5.0
500
25
40
15
-65 to +150
V
µA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 13mm2 copper pad.
DF150S – DF1510S
1 of 4
© 2006 Won-Top Electronics