DD500 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 50A 8.4mm/9.5mm DISH DIODE

WTE
POWER SEMICONDUCTORS
DD500/S – DD506/S
50A 8.4mm/9.5mm DISH DIODE
Features
! Glass Passivated Die Construction
! Low Leakage
! Low Cost
! High Surge Current Capability
! Low Forward
! C-Band Terminal Construction
C
D
Mechanical Data
! Case: All Copper Case and Components
Hermetically Sealed
! Terminals: Contact Areas Readily Solderable
! Polarity: Cathode to Case(Reverse Units Are
Available Upon Request and Are Designated
By An “R” Suffix, i.e. DD502R or DD504SR)
! Polarity: Red Color Equals Standard,
Black Color Equals Reverse Polarity
! Mounting Position: Any
B
A
8.4mm Dish
9.5mm Dish
Dim
Min
Max
Min
Max
A
8.35
8.45
9.50
9.72
B
2.0
2.16
2.0
2.16
C
1.43
1.47
1.43
1.47
D
22.3
—
22.3
—
All Dimensions in mm
“S” Suffix Designates 8.4mm Dish
No Suffix Designates 9.5mm Dish
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
DD500/
S
DD501/
S
DD502/
S
DD503/
S
DD504/
S
DD505/
S
DD506/
S
VRRM
VRWM
50
100 200 300 400 500 600
VR
Unit
V
VR(RMS)
35
70
140 210 280 350 420
V
Average Rectified Output Current @T_A = 150°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 50A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
IRM
Typical Junction Capacitance (Note 1)
Cj
50
A
500
A
1.1
V
100
500
µA
300
pF
Typical Thermal Resistance Junction to Case
(Note 2)
R
JC
0.6
K/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
DD500/S – DD506/S
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© 2002 Won-Top Electronics