C5020 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 50A AVALANCHE AUTOMOTIVE CELL DIODE

WTE
POWER SEMICONDUCTORS
Features
Diffused Junction
Low Leakage
Low Cost
High Surge Current Capability
Die Size 220 mil HEX
C5020 & C5024 ^Pb
50A AVALANCHE AUTOMOTIVE CELL DIODE
D
Anode +
C
E
Mechanical Data
B
C50
Case: Cell Diode Passivated with Silicon Rubber
Dim
Min
Max
Terminal: Copper Disc with Ag Plated
A
—
7.40
Polarity: Indicated by Large Disc On Cathode
B
—
6.55
Side, Add “R” Suffix to Indicate Reverse Polarity,
C
0.75
—
i.e. C5020R
D
1.0
—
Mounting Position: Any
A
E
—
2.2
Lead Free: For RoHS / Lead Free Version,
All Dimensions in mm
Add “-LF” Suffix to Part Number, See Page 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
@TC = 150°C
Breakdown Voltage Min.
Breakdown Voltage Max.
@IR = 100mA
@IR = 100mA
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 100A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
IO
VBR
IFSM
VFM
IRM
RθJA
TJ, TSTG
C5020
C5024
16
20
50
20
24
26
32
500
1.08
200
1.0
-40 to +150
Unit
V
A
V
A
V
nA
°C/W
°C
C5020 & C5024
1 of 2
© 2006 Won-Top Electronics