C35A_06 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 35A AUTOMOTIVE CELL DIODE

WTE
POWER SEMICONDUCTORS
Features
Diffused Junction
Low Leakage
Low Cost
High Surge Current Capability
Die Size 184 mil HEX
C35A – C35K ^Pb
35A AUTOMOTIVE CELL DIODE
D
Anode +
C
E
Mechanical Data
B
C35
Case: Cell Diode Passivated with Silicon Rubber
Dim
Min
Max
Terminal: Copper Disc with Ag Plated
A
—
6.30
Polarity: Indicated by Large Disc On Cathode
B
—
5.46
Side, Add “R” Suffix to Indicate Reverse Polarity,
C
0.75
—
i.e. C35AR
D
1.0
—
Mounting Position: Any
A
E
—
2.2
Lead Free: For RoHS / Lead Free Version,
All Dimensions in mm
Add “-LF” Suffix to Part Number, See Page 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol C35A C35B C35D C35G C35J C35K Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
V
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current @TC = 150°C
IO
70
140
280
420
560
V
35
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
400
A
Forward Voltage
@IF = 80A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
IRM
Typical Thermal Resistance Junction to Ambient
RθJA
Operating and Storage Temperature Range
TJ, TSTG
1.08
3.0
1.4
-40 to +150
V
µA
°C/W
°C
C35A – C35K
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© 2006 Won-Top Electronics