BY550-50 Datasheet, PDF (1/4 Pages) Jinan Gude Electronic Device – 5.0 AMP.SILICON RECTIFIERS

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
BY550-50 – BY550-1000 ^Pb
5.0A STANDARD DIODE
A
B
A
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-201AD
Dim
Min
Max
A
25.4
—
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
BY550- BY550- BY550- BY550- BY550- BY550- BY550-
50
100 200 400 600 800 1000
VRRM
VRWM
50
100 200 400 600 800 1000
VR
Unit
V
RMS Reverse Voltage
VR(RMS)
35
70
140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
5.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
300
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 5.0A
VFM
1.1
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
20
100
µA
Typical Junction Capacitance (Note 2)
Cj
40
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
30
°C/W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
BY550-50 – BY550-1000
1 of 4
© 2006 Won-Top Electronics