BY133 Datasheet, PDF (1/3 Pages) Won-Top Electronics – 1.0A SILICON RECTIFIER

W TE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.35 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
BY133
1.0A SILICON RECTIFIER
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@T_A = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms Single
half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@I_F = 1.0A
@T_A = 25°C
@T_A = 100°C
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
R
JA
Tj
TSTG
BY133
Unit
1300
V
910
V
1.0
A
30
A
1.0
V
5.0
50
µA
15
pF
50
K/W
-65 to +125
°C
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
BY133
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© 2002 Won-Top Electronics