BAS40W Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes

WTE
POWER SEMICONDUCTORS
BAS40W / AW / CW / SW ^Pb
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Low Turn-on Voltage
! Fast Switching
! PN Junction Guard Ring for Transient and
ESD Protection
! Designed for Surface Mount Application
B
! Plastic Material – UL Recognition Flammability
Classification 94V-O





Mechanical Data
! Case: SOT-323, Molded Plastic
K
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagrams Below
! Weight: 0.006 grams (approx.)
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
A
E
D
H
G
L
C
M
SOT-323
Dim
Min
Max
A
0.30
0.40
B
1.15
1.35
C
2.00
2.20
J
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
—
0.10
K
0.90
1.10
L
0.25
—
M
0.05
0.15
All Dimensions in mm
TOP VIEW
TOP VIEW
TOP VIEW
TOP VIEW
BAS40W Marking: S40 BAS40AW Marking: S42 BAS40CW Marking: S43 BAS40SW Marking: S44
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Forward Surge Current (Note 1)
@ t < 1.0s
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Note: 1. Device on fiberglass substrate.
Symbol
VRRM
VRWM
VR
IF
IFSM
Pd
R
JA
Tj, TSTG
Value
40
200
600
200
625
-55 to +150
Unit
V
mA
mA
mW
°C/W
°C
BAS40W / AW / CW / SW
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