BAS19 Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose diodes

WTE
POWER SEMICONDUCTORS
BAS19 – BAS21
SURFACE MOUNT FAST SWITCHING DIODE
Features
! High Conductance
L
! Fast Switching
A
! Surface Mount Package Ideally Suited for
Automatic Insertion
! For General Purpose and Switching
B
! Plastic Material – UL Recognition Flammability
TOP VIEW
C
Classification 94V-O
M



















































E
D
H
Mechanical Data
! Case: SOT-23, Molded Plastic
K
! Terminals: Plated Leads Solderable per
J
MIL-STD-202, Method 208
G
! Polarity: See Diagram
! Weight: 0.008 grams (approx.)
! Mounting Position: Any
! Marking: BAS19 A8
TOP VIEW
BAS20 A80
BAS21 A82
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Maximum Ratings @T_A=25°C unless otherwise specified
Characteristic
Symbol
BAS19
BAS20
BAS21
Unit
Non-Repetitive Peak Reverse Voltage
VRM
120
200
250
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
100
150
200
V
VR
Forward Continuous Current (Note 1)
IF
400
mA
Average Rectified Output Current (Note 1)
IO
200
mA
Peak Forward Surge Current (Note 1)
@ t = 1.0µs
IFSM
2.5
A
Power Dissipation (Note 1)
Pd
350
mW
Typical Thermal Resistance, Junction to Ambient Air (Note 1) R
JA
500
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
Min
VF
—
—
IR
—
Cj
—
trr
—
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
Max
1.0
1.25
100
5.0
50
Unit
V
nA
pF
nS
Test Condition
@ IF = 100mA
@ IF = 200mA
@ Rated DC Blocking Voltage
VR = 0V, f = 1.0MHz
IF = IR = 30mA,
IRR = 0.1 x IR, RL = 100

BAS19 – BAS21
1 of 3
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