BA157_06 Datasheet, PDF (1/4 Pages) Won-Top Electronics – 1.0A FAST RECOVERY DIODE

WTE
POWER SEMICONDUCTORS
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
BA157 – BA159 ^Pb
1.0A FAST RECOVERY DIODE
A
B
A
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T_A = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
trr
Cj
Tj
TSTG
BA157
400
280
150
BA158
600
420
1.0
30
1.2
5.0
100
250
15
-65 to +125
-65 to +150
BA159
Unit
1000
V
700
V
A
A
V
µA
500
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
BA157 – BA159
1 of 4
© 2006 Won-Top Electronics