B1S Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER(VOLTAGE - 100 to 1000 Volts CURRENT - 0.5 Amperes)

W TE
POWER SEMICONDUCTORS
B1S – B8S
0.5A MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Surge Current Capability
-
+
! Designed for Surface Mount Application
B
~
~
! Plastic Material – UL Recognition Flammability
Classification 94V-O
M
A
Mechanical Data
J
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
K
! Polarity: As Marked on Case
! Weight: 0.22 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
G
H
C
DE
L
MB-S
Dim
Min
Max
A
4.50
4.90
B
3.80
4.20
C
0.006
0.35
D
—
0.20
E
—
7.0
G
0.70
1.10
H
1.30
1.70
J
2.30
2.70
K
2.30
2.70
L
—
3.00
M
0.50
0.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T_A = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I²t Rating for Fusing (t < 8.35ms)
Forward Voltage per element
@I_F = 0.5A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 125°C
Typical Junction Capacitance (per leg) (Note 1)
Typical Thermal Resistance (per leg) (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
I²t
VFM
IRM
Cj
R
JA
Tj, TSTG
B1S
B2S
B4S
B6S
B8S Unit
100
200
400
600
800
V
70
140
280
420
560
V
0.5
A
30
A
10
A²s
1.0
V
5.0
500
µA
25
pF
85
K/W
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 13mm² copper pads.
B1S – B8S
1 of 3
© 2002 Won-Top Electronics